CSD19505KCS (USA) 80V 150A N-Channel NexFET Power MOSFET TO-220

Description

The CSD19505KCS is an 80V N-Channel MOSFET designed for high-efficiency power applications, including motor control and secondary-side synchronous rectification. This MOSFET offers ultra-low gate charge and on-resistance, making it ideal for high-performance switching in power management systems. It comes in a TO-220 plastic package and is RoHS compliant with Pb-free terminal plating.

Specifications:

• Drain-to-Source Voltage (VDS): 80 V
• Total Gate Charge (Qg, VGS = 10V): 76 nC
• Gate-to-Drain Charge (Qgd): 11 nC
• On-Resistance (RDS(on), VGS = 6V): 2.9 mΩ
• On-Resistance (RDS(on), VGS = 10V): 2.6 mΩ
• Threshold Voltage (VGS(th)): 2.6 V
• Gate-to-Source Voltage (VGS): ±20 V
• Continuous Drain Current (Package limited, TA = 25°C): 150 A
• Continuous Drain Current (Silicon limited, TC = 25°C): 208 A
• Continuous Drain Current (Silicon limited, TC = 100°C): 147 A
• Pulsed Drain Current (IDM): 400 A
• Power Dissipation (PD): 300 W
• Operating Junction and Storage Temperature (TJ, Tstg): -55 to 175 °C
• Single Pulse Avalanche Energy (EAS): 510 mJ